METHOD OF INSPECTING A SEMICONDUCTOR DEVICE AND PROBING ASSEMBLY FOR USE THEREIN
    1.
    发明申请
    METHOD OF INSPECTING A SEMICONDUCTOR DEVICE AND PROBING ASSEMBLY FOR USE THEREIN 审中-公开
    检查半导体器件的方法及其使用的探针组件

    公开(公告)号:US20150102831A1

    公开(公告)日:2015-04-16

    申请号:US14505602

    申请日:2014-10-03

    CPC classification number: G01R31/2621 G01R31/11

    Abstract: A probing assembly includes a TDR probe coupling a time-domain reflectometry (TDR) device with a semiconductor device including a transistor therein, the transistor having a gate electrode, a source electrode, and a drain electrode on a substrate, wherein the TDR probe includes a first probe tip connecting the gate electrode to a signal line of the TDR device, and second to fourth probe tips connecting the source electrode, the drain electrode, and a bulk region of the substrate to ground lines of the TDR device, respectively.

    Abstract translation: 探测组件包括将时域反射(TDR)器件与其中包括晶体管的半导体器件耦合的TDR探针,晶体管在衬底上具有栅电极,源电极和漏电极,其中TDR探针包括 将栅电极连接到TDR器件的信号线的第一探针尖端,以及分别将源电极,漏电极和基片的体区连接到TDR器件的接地线的第二至第四探针尖端。

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