Abstract:
A probing assembly includes a TDR probe coupling a time-domain reflectometry (TDR) device with a semiconductor device including a transistor therein, the transistor having a gate electrode, a source electrode, and a drain electrode on a substrate, wherein the TDR probe includes a first probe tip connecting the gate electrode to a signal line of the TDR device, and second to fourth probe tips connecting the source electrode, the drain electrode, and a bulk region of the substrate to ground lines of the TDR device, respectively.