SEMICONDUCTOR LIGHT EMITTING DEVICE

    公开(公告)号:US20220085257A1

    公开(公告)日:2022-03-17

    申请号:US17323042

    申请日:2021-05-18

    Abstract: A semiconductor light emitting device including a semiconductor laminate having first and second surfaces, the semiconductor laminate including first and second conductivity-type semiconductor layers, and an active layer between the semiconductor layers; a partition structure on the first surface, the partition structure having a window defining a light emitting region of the first surface of the semiconductor laminate; a wavelength converter in the window, the wavelength converter being configured to convert a wavelength of light emitted from the active layer; and a first electrode and a second electrode on the second surface of the semiconductor laminate and respectively connected to the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the semiconductor laminate includes a plurality of first patterns arranged in the light emitting region of the first surface, and a plurality of second patterns arranged in a covered region of the first surface contacting the partition structure.

    SEMICONDUCTOR LIGHT EMITTING DEVICES AND METHODS OF MANUFACTURING THE SAME

    公开(公告)号:US20220199679A1

    公开(公告)日:2022-06-23

    申请号:US17542720

    申请日:2021-12-06

    Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device includes a plurality of light emitting structures, each of which includes a first surface and a second surface, a plurality of embossed portions provided on the first surface; a partition wall structure provided on the first surface of the plurality of light emitting structures and including a plurality of partition walls which define a plurality of pixel spaces; and a fluorescent layer provided in the plurality of pixel spaces. A bottom surface of the partition wall structure contacts the plurality of embossed portions.

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