公开(公告)号：US10525566B2

公开(公告)日：2020-01-07

申请号：US15602256

申请日：2017-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-ki Hong ,  Yung-jun Kim ,  Sung-oh Park ,  Hyo-san Lee ,  Joo-han Lee ,  Kyu-min Oh ,  Sun-gyu Park ,  Seh-kwang Lee ,  Chan-ki Yang

IPC: B24B53/017 ,  B24B37/04 ,  H01L21/321 ,  H01L21/66 ,  B24B37/005 ,  H01L21/768

Abstract: A chemical mechanical polishing (CMP) method includes preparing a polishing pad, determining a first load to be applied to a conditioning disk during conditioning of the polishing pad and a first indentation depth at which tips of the conditioning disk are inserted into the polishing pad when the first load is applied to the conditioning disk, preparing a conditioning disk, and positioning the conditioning disk on the polishing pad and conditioning a surface of the polishing pad by using the conditioning disk while applying the first load to the conditioning disk.