公开(公告)号：US20180158718A1

公开(公告)日：2018-06-07

申请号：US15667118

申请日：2017-08-02

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： DONG RYUL LEE ,  Joong Chan SHIN ,  Dong Jun LEE ,  Ho Ouk LEE ,  Ji Min CHOI ,  Ji Young KIM ,  Chan Sic YOON ,  Chang Hyun CHO

IPC分类号： H01L21/764 ,  H01L21/768 ,  H01L29/06 ,  H01L29/49 ,  H01L23/522

CPC分类号： H01L21/764 ,  H01L21/7682 ,  H01L21/76897 ,  H01L23/522 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10894 ,  H01L29/0649 ,  H01L29/4983

摘要： A method for fabricating a semiconductor device includes providing a substrate including a cell region including a bit line structure, a bit line spacer and a lower electrode and a peripheral circuit region including first to third impurity regions, forming an interlayer insulating film on the peripheral circuit region, forming a first metal layer on the interlayer insulating film, forming a first trench and a second trench in the first metal layer between the first and second impurity regions, the second trench is disposed between the second and third impurity regions and exposes the interlayer insulating film, forming a first capping pattern on the first trench to form an air gap in the first trench, filling the second trench with a first insulating material, and forming, on the first metal layer, a contact connected to the third impurity region.