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公开(公告)号:US20210028283A1
公开(公告)日:2021-01-28
申请号:US16822389
申请日:2020-03-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sungkweon BAEK , Taeyoung KIM , Hakseon KIM , Kangoh YUN , Changhoon JEON , Junhee LIM
IPC: H01L29/10 , H01L29/423
Abstract: A semiconductor device includes a gate structure disposed on a substrate. The gate structure has a first sidewall and a second sidewall facing the first sidewall. A first impurity region is disposed within an upper portion of the substrate. The first impurity region is spaced apart from the first sidewall. A third impurity region is within the upper portion of the substrate. The third impurity region is spaced apart from the second sidewall. A first trench is disposed within the substrate between the first sidewall and the first impurity region. The first trench is spaced apart from the first sidewall. A first barrier insulation pattern is disposed within the first trench.