公开(公告)号：US20210384256A1

公开(公告)日：2021-12-09

申请号：US17406166

申请日：2021-08-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Si-Ho SONG ,  Jeonghee PARK ,  Changhyun CHO

IPC: H01L27/24 ,  H01L45/00 ,  G11C5/06

Abstract: A three-dimensional semiconductor memory device includes first conductive lines extending horizontally in a first direction, a second conductive line extending vertically in a second direction perpendicular to the first direction, and memory cells at cross-points between the first conductive lines and the second conductive line. The first conductive lines are laterally spaced apart from each other in a third direction crossing the first direction. Each of the memory cells includes a variable resistance element and a switching element that are horizontally arranged. The variable resistance element includes a first variable resistance pattern and a second variable resistance pattern arranged in the second direction, a first electrode between the first variable resistance pattern and the first conductive line, a second electrode between the second variable resistance pattern and the second conductive line, and a third electrode between the first variable resistance pattern and the second variable resistance pattern.