公开(公告)号：US11168253B2

公开(公告)日：2021-11-09

申请号：US16734789

申请日：2020-01-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changsu Jeon ,  Jungmin Oh ,  Hyosan Lee ,  Hoon Han ,  Jinkyu Roh ,  Hyojoong Yoon ,  Dongwun Shin

IPC: C09K13/00 ,  H01L21/02 ,  H01L21/04 ,  H01L21/302 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213

Abstract: A silicon layer etchant composition and associated methods, the composition including about 1 wt % to about 20 wt % of an alkylammonium hydroxide; about 1 wt % to about 30 wt % of an amine compound; about 0.01 wt % to about 0.2 wt % of a nonionic surfactant including both a hydrophobic group and a hydrophilic group; and water, all wt % being based on a total weight of the silicon layer etchant composition.