公开(公告)号：US20200235222A1

公开(公告)日：2020-07-23

申请号：US16836138

申请日：2020-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changwoo NOH ,  Munhyeon KIM ,  Hansu OH ,  Sungman WHANG ,  Dongwon KIM

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/311 ,  H01L29/786 ,  H01L29/423

Abstract: Semiconductor devices and methods of fabricating the same are provided. The method includes forming on a substrate an active pattern that protrudes from the substrate and extends in one direction; forming on the active pattern a sacrificial gate structure that extends in a direction intersecting the active pattern; forming on a side surface of the sacrificial gate structure a first spacer including a first portion at a lower level than a top surface of the active pattern and a second portion on the first portion, and reducing a thickness of the second portion of the first spacer.