公开(公告)号：US20230335618A1

公开(公告)日：2023-10-19

申请号：US17989936

申请日：2022-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chankyo PARK ,  Seungchul OH ,  Jaeho JEON ,  Sunggi HUR

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775

CPC classification number: H01L29/66545 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/66742 ,  H01L29/66439

Abstract: A method of manufacturing a semiconductor device is provided. The method includes: forming, on a substrate, dummy gate structures extending in a first direction, spaced apart from one another along a second direction, forming a first oxide layer on the dummy gate structures, etching an upper portion of the first oxide layer and the dummy gate to form a recess region, providing a first nitride layer in the recessed region, forming a second oxide layer on the first nitride layer and the first oxide layer, partially removing upper portions of the first oxide layer and the second oxide layer and providing a second nitride layer on the first and second oxide layers.