公开(公告)号：US20220068810A1

公开(公告)日：2022-03-03

申请号：US17221191

申请日：2021-04-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seonghun LIM ,  Wookyung YOU ,  Kyoungwoo LEE ,  Juyoung JUNG ,  Il Sup KIM ,  Chin KIM ,  Kyoungpil PARK ,  Jinhyung PARK

IPC: H01L23/522 ,  H01L23/528 ,  H01L27/06

Abstract: A semiconductor device including a transistor on a substrate; an interlayer insulating layer on the transistor; a first metal-containing layer on the interlayer insulating layer; and a second metal-containing layer on the first metal-containing layer, wherein the second metal-containing layer includes a resistor, the resistor includes a first insulating layer on the first metal-containing layer; a resistor metal layer on the first insulating layer; and a second insulating layer on the resistor metal layer, and the resistor metal layer includes a recessed side surface.