公开(公告)号：US20220068810A1

公开(公告)日：2022-03-03

申请号：US17221191

申请日：2021-04-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seonghun LIM ,  Wookyung YOU ,  Kyoungwoo LEE ,  Juyoung JUNG ,  Il Sup KIM ,  Chin KIM ,  Kyoungpil PARK ,  Jinhyung PARK

IPC: H01L23/522 ,  H01L23/528 ,  H01L27/06

Abstract: A semiconductor device including a transistor on a substrate; an interlayer insulating layer on the transistor; a first metal-containing layer on the interlayer insulating layer; and a second metal-containing layer on the first metal-containing layer, wherein the second metal-containing layer includes a resistor, the resistor includes a first insulating layer on the first metal-containing layer; a resistor metal layer on the first insulating layer; and a second insulating layer on the resistor metal layer, and the resistor metal layer includes a recessed side surface.

公开(公告)号：US20230005838A1

公开(公告)日：2023-01-05

申请号：US17672990

申请日：2022-02-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaemyung CHOI ,  Kyoungwoo LEE ,  Nayon KIM ,  Seonghun LIM ,  Sungyup JUNG

IPC: H01L23/522 ,  H01L21/033 ,  H01L21/768 ,  H01L23/528

Abstract: A semiconductor device includes a lower structure, a first interlayer dielectric (ILD) on the lower structure, first pattern regions extending inside the first ILD in a first direction, the first pattern regions being spaced apart from each other in a second direction perpendicular to the first direction, each of the first pattern regions including at least one first pattern, and both ends of the at least one first pattern in the first direction being concave, and second pattern regions extending inside the first ILD in the first direction, the second pattern regions being spaced apart from each other in the second direction and alternating with the first pattern regions in the second direction, and each of the second pattern regions including at least one second pattern.