公开(公告)号：US20220068810A1

公开(公告)日：2022-03-03

申请号：US17221191

申请日：2021-04-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seonghun LIM ,  Wookyung YOU ,  Kyoungwoo LEE ,  Juyoung JUNG ,  Il Sup KIM ,  Chin KIM ,  Kyoungpil PARK ,  Jinhyung PARK

IPC: H01L23/522 ,  H01L23/528 ,  H01L27/06

Abstract: A semiconductor device including a transistor on a substrate; an interlayer insulating layer on the transistor; a first metal-containing layer on the interlayer insulating layer; and a second metal-containing layer on the first metal-containing layer, wherein the second metal-containing layer includes a resistor, the resistor includes a first insulating layer on the first metal-containing layer; a resistor metal layer on the first insulating layer; and a second insulating layer on the resistor metal layer, and the resistor metal layer includes a recessed side surface.

公开(公告)号：US20240379427A1

公开(公告)日：2024-11-14

申请号：US18643061

申请日：2024-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Il Sup KIM

IPC: H01L21/768 ,  H01L21/311

Abstract: A semiconductor device capable of improving element performance and reliability uses an etch stop film formed as a homogenous film. An etch stop film, an interlayer insulating film, and a hard mask pattern are sequentially formed on a substrate. A trench is formed in the interlayer insulating film using the hard mask pattern that exposes a surface of a portion of the etch stop film at a bottom of the trench. At the bottom of the trench, the hard mask pattern and a first portion of the etch stop film are removed by using a first wet etching process. A remaining portion of the etch stop film at the bottom of the trench is removed to expose the lower wiring pattern by using a second wet etching process.

公开(公告)号：US20240379426A1

公开(公告)日：2024-11-14

申请号：US18397713

申请日：2023-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Il Sup KIM

IPC: H01L21/768 ,  H01L21/311

Abstract: A method of manufacturing a semiconductor device capable of improving element performance and reliability uses an etch stop film formed as a homogenous film. The method for fabricating a semiconductor device comprises sequentially forming an etch stop film, an interlayer insulating film, and a hard mask pattern on a substrate. A trench is formed in the interlayer insulating film using the hard mask pattern that exposes a surface of a portion of the etch stop film at a bottom of the trench. At the bottom of the trench, the hard mask pattern and a first portion of the etch stop film are removed by using a first wet etching process. A remaining portion of the etch stop film at the bottom of the trench is removed to expose the lower wiring pattern by using a second wet etching process.