公开(公告)号：US20230023774A1

公开(公告)日：2023-01-26

申请号：US17696968

申请日：2022-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minkwan KIM ,  Daeeun JEONG ,  Kyungtae NAM

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

Abstract: A method of manufacturing a magnetoresistive random-access memory (MRAM) device includes forming an insulating interlayer on a substrate, forming a contact plug extending through the insulating interlayer, forming a first blocking layer covering an upper surface of the contact plug, the first blocking layer including an amorphous material, forming a lower electrode layer on the first blocking layer, and forming a magnetic tunnel junction structure layer on the lower electrode layer.