公开(公告)号：US20170250222A1

公开(公告)日：2017-08-31

申请号：US15294873

申请日：2016-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Zhe WU ,  Soon-Oh PARK ,  Jeong-HEE PARK ,  Dong-Ho AHN ,  Hideki HORII

IPC: H01L27/24 ,  H01L43/08 ,  H01L45/00

CPC classification number: H01L45/144 ,  H01L27/2409 ,  H01L27/2427 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1675 ,  H01L45/1683

Abstract: A variable resistance memory device including a selection pattern; an intermediate electrode contacting a first surface of the selection pattern; a variable resistance pattern on an opposite side of the intermediate electrode relative to the selection pattern; and a first electrode contacting a second surface of the selection pattern and including a n-type semiconductor material, the second surface of the selection pattern being opposite the first surface thereof.