公开(公告)号：US20250107461A1

公开(公告)日：2025-03-27

申请号：US18753575

申请日：2024-06-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changyup PARK ,  Young Jae Kang ,  DongGeon Gu ,  Bonwon Koo ,  Segab Kwon ,  Dongho Ahn ,  Changseung Lee ,  Yongnam Ham

IPC: H10N70/00 ,  C22C30/00 ,  H10B63/00

Abstract: Provided are variable resistance materials and a variable resistance memory devices including the same. The variable resistance memory device includes: a first electrode; a first variable resistance material on the first electrode; and a second electrode on the first variable resistance material. The first variable resistance material includes germanium, antimony, tellurium, carbon, and sulfur and is expressed by CpSqGexSbyTez, where p is an atomic concentration of carbon, q is an atomic concentration of sulfur, x is an atomic concentration of germanium, y is an atomic concentration of antimony, and z is an atomic concentration of tellurium, wherein a sum of p, q, x, y, and z equals 1, wherein each of p, q, x, y, and z is greater than zero, and wherein q is greater than 0.01 and is less than or equal to about 0.2.