Abstract:
Provided are variable resistance materials and a variable resistance memory devices including the same. The variable resistance memory device includes: a first electrode; a first variable resistance material on the first electrode; and a second electrode on the first variable resistance material. The first variable resistance material includes germanium, antimony, tellurium, carbon, and sulfur and is expressed by CpSqGexSbyTez, where p is an atomic concentration of carbon, q is an atomic concentration of sulfur, x is an atomic concentration of germanium, y is an atomic concentration of antimony, and z is an atomic concentration of tellurium, wherein a sum of p, q, x, y, and z equals 1, wherein each of p, q, x, y, and z is greater than zero, and wherein q is greater than 0.01 and is less than or equal to about 0.2.
Abstract:
A cathode active material including a layered lithium transition metal oxide, wherein the layered lithium transition metal oxide includes a metal cation having an oxidation number of +4, and wherein the metal cation is disposed in an octahedral site of a lattice of the layered lithium transition metal oxide.
Abstract:
A cathode active material including a layered lithium transition metal oxide, wherein the layered lithium transition metal oxide includes a metal cation having an oxidation number of +4, and wherein the metal cation is disposed in an octahedral site of a lattice of the layered lithium transition metal oxide.