公开(公告)号：US20220199374A1

公开(公告)日：2022-06-23

申请号：US17372131

申请日：2021-07-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEJIN OH ,  TAEMIN EARMME ,  EUNWOO LEE ,  JONGWOO SUN

IPC: H01J37/32 ,  H01J37/244 ,  H01L21/66

Abstract: A method of monitoring a substrate processing apparatus includes applying a high-frequency radio frequency (RF) power signal and a low-frequency RF power signal from a bias power supply apparatus to an electrostatic chuck of a process chamber through a matching circuit. The method further includes applying a direct current (DC) power signal from a DC power supply apparatus to an edge ring of the process chamber through a high-frequency filter and a low-frequency filter. The method further includes measuring a low-frequency RF voltage value at a first point between the matching circuit and the electrostatic chuck, measuring the low-frequency RF voltage value at a second point between the high-frequency filter and the low-frequency filter, and acquiring a voltage ratio between the low-frequency RF voltage value at the first point and the low-frequency RF voltage value at the second point. The method further includes monitoring a state of the edge ring by comparing a threshold with the voltage ratio.

公开(公告)号：US20220223452A1

公开(公告)日：2022-07-14

申请号：US17408437

申请日：2021-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngjae SON ,  Guesuk LEE ,  TAEMIN EARMME ,  HYEONGYUN LEE ,  SEUNGCHUL HAN

IPC: H01L21/683 ,  H01L21/67

Abstract: Disclosed are chuck assemblies, semiconductor device fabricating apparatuses, and methods of fabricating semiconductor devices. The chuck assembly comprises a chuck base including lower and upper bases, a ceramic plate on the upper base, an edge ring that surrounds the ceramic plate, a ground ring that surrounds an outer sidewall of the edge ring on an edge portion of the lower base, a coupling ring between the ground ring and the upper base and between the edge ring and the edge portion of the lower base, an upper heat sink between the coupling ring and the edge ring, and a sidewall heat sink between the coupling ring and the ground ring and between the coupling ring and the upper base.