公开(公告)号：US20130234090A1

公开(公告)日：2013-09-12

申请号：US13684884

申请日：2012-11-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-kyu LEE ,  Seung-pil KO ,  Yong-jun KIM ,  Eun-jung KIM

IPC: H01L45/00

CPC classification number: H01L45/00 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/144 ,  H01L45/1675 ,  H01L45/1683

Abstract: A semiconductor device includes a first semiconductor layer extending in a first direction on a substrate, a plurality of second semiconductor layers spaced apart in the first direction on the first semiconductor layer, and an insulation layer structure surrounding side walls of the first semiconductor layer and the plurality of second semiconductor layers. The first semiconductor layer may have a first conductivity type, and the plurality of second semiconductor layers may have a second conductivity type.

Abstract translation: 半导体器件包括在衬底上沿第一方向延伸的第一半导体层，在第一半导体层上沿第一方向隔开的多个第二半导体层和围绕第一半导体层的侧壁的绝缘层结构， 多个第二半导体层。 第一半导体层可以具有第一导电类型，并且多个第二半导体层可以具有第二导电类型。