公开(公告)号：US20220113619A1

公开(公告)日：2022-04-14

申请号：US17371375

申请日：2021-07-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongkeun OH ,  Sanguk PARK ,  Gyeongcheon JO ,  Jongju PARK

IPC: G03F1/24 ,  H01L21/027

Abstract: A method is provided. The method includes preparing a mask blank, the mask blank including a substrate, a reflective layer disposed on the substrate for reflecting extreme ultraviolet light, and a light absorbing layer disposed on the reflective layer; providing a photomask by forming a plurality of pattern elements having a target critical dimension from the light absorbing layer, wherein the plurality of pattern elements include a correction target pattern element to be corrected, and the correction target pattern element has a critical dimension different from the target critical dimension; identifying a correction target area of the photomask in which the correction target pattern element is disposed; applying an etchant to the photomask; and irradiating a laser beam to the correction target area while the etchant is provided on the photomask.