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1.发明公开公开(公告)号：US20230408912A1
公开(公告)日：2023-12-21
申请号：US18328395
申请日：2023-06-02
发明人： Jongkeun OH , Yongwoo KIM , Suzy ROH , Jongju PARK
CPC分类号： G03F1/74 , H01L21/0274 , G03F1/24
摘要： A method of manufacturing a photomask includes forming a photomask having a plurality of pattern elements, wherein the plurality of pattern elements include correction-target pattern elements having a critical dimension (CD) deviation; acquiring local CD correction information; directing a laser beam to a mirror array of a digital micromirror device (DMD), wherein the mirror array has mirrors arranged in a plurality of rows and a plurality of columns; converting the laser beam into a beam pattern array corresponding to the mirror array by controlling on/off switching of each of the mirrors based on the local CD correction information; forming a linear beam by focusing the beam pattern array through an optical system; applying an etchant to the photomask and directing the linear beam to the photomask and moving the linear beam to irradiate the photomask.
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2.发明申请公开(公告)号：US20220283512A1
公开(公告)日：2022-09-08
申请号：US17508144
申请日：2021-10-22
发明人： Sanguk PARK , Yongwoo KIM , Jongju PARK , Youngchang SEO , Jongkeun OH
摘要： A correcting apparatus of an extreme ultraviolet (EUV) photomask includes: a support portion configured to support an EUV photomask having a main area in which a plurality of pattern elements are arranged, a chemical supply unit configured to supply a chemical to the main area, a light source unit configured to generate a laser beam, and a control unit configured to irradiate the laser beam to the chemical supplied to the main area of the EUV photomask and to, based a laser dosage map for correcting critical dimensions (CDs) of the plurality of pattern elements in the main area, adjust a dosage of the laser beam based on the laser dosage map such that among the plurality of pattern elements, pattern elements having different critical dimensions are etched at different etching rates.
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公开(公告)号：US20220113619A1
公开(公告)日：2022-04-14
申请号：US17371375
申请日：2021-07-09
发明人： Jongkeun OH , Sanguk PARK , Gyeongcheon JO , Jongju PARK
IPC分类号： G03F1/24 , H01L21/027
摘要： A method is provided. The method includes preparing a mask blank, the mask blank including a substrate, a reflective layer disposed on the substrate for reflecting extreme ultraviolet light, and a light absorbing layer disposed on the reflective layer; providing a photomask by forming a plurality of pattern elements having a target critical dimension from the light absorbing layer, wherein the plurality of pattern elements include a correction target pattern element to be corrected, and the correction target pattern element has a critical dimension different from the target critical dimension; identifying a correction target area of the photomask in which the correction target pattern element is disposed; applying an etchant to the photomask; and irradiating a laser beam to the correction target area while the etchant is provided on the photomask.
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4.发明申请APPARATUS GENERATING EXTREME ULTRAVIOLET LIGHT AND EXPOSURE SYSTEM INCLUDING THE SAME 审中-公开产生超极紫外光的装置包括其中的光和曝光系统公开(公告)号：US20170031142A1
公开(公告)日：2017-02-02
申请号：US15183015
申请日：2016-06-15
发明人： Eokbong KIM , Mun Ja KIM , Jongju PARK , Donggun LEE , Byunggook KIM
CPC分类号： G02B19/0095 , G02B5/003 , G02B19/0023 , G03F7/70033 , G03F7/70916 , G21K1/062 , G21K1/10 , H05G2/001
摘要： An extreme ultraviolet (EUV) light generation apparatus includes a source supplying unit in a chamber, the source supplying unit including a source material for generation of extreme ultraviolet light, a plasma generator to generate plasma from the source material, an optical unit in the chamber, and at least one protection film adjacent to the optical unit, the at least one protection film including at least one of graphite or graphene.
摘要翻译： 一种极紫外（EUV）光产生装置包括：室中的源供给单元，源供给单元，包括用于产生极紫外光的源材料;等离子体发生器，用于从源材料产生等离子体;室中的光学单元; 以及与光学单元相邻的至少一个保护膜，所述至少一个保护膜包括石墨或石墨烯中的至少一个。
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