RESIST COMPOUND AND METHOD OF FORMING PATTERN USING THE SAME

    公开(公告)号:US20230341776A1

    公开(公告)日:2023-10-26

    申请号:US18106254

    申请日:2023-02-06

    CPC classification number: G03F7/06 C07F1/005

    Abstract: A resist compound is represented by Formula 1:




    wherein R1 is an alkyl group having 1 to 12 carbon atoms, an alkenyl group having 1 to 12 carbon atoms, or a hydrocarbon ring group having 3 to 12 carbon atoms, and A bonded to R1 is O or NR2, wherein R2 is hydrogen, an alkyl group having 1 to 12 carbon atoms, an alkenyl group having 1 to 12 carbon atoms, or a hydrocarbon ring group having 3 to 12 carbon atoms. A resist composition includes the resist compound and an organic solvent. A method for forming a resist pattern includes forming a resist layer by applying the resist composition including the resist compound on a substrate, irradiating light onto the resist layer to provide an irradiated resist layer, and developing the irradiated resist layer to form a resist pattern.

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