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    RESIST COMPOUND AND METHOD OF FORMING PATTERN USING THE SAME
    1.
    发明公开
    RESIST COMPOUND AND METHOD OF FORMING PATTERN USING THE SAME 审中-公开

    公开(公告)号：US20230341776A1

    公开(公告)日：2023-10-26

    申请号：US18106254

    申请日：2023-02-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： HOYOUNG KIM ,  Youngkwan LEE ,  SOOCHAN KIM ,  Hyungjun CHEE ,  HYUNWOO KIM ,  SONGSE YI

    IPC: G03F7/06 ,  C07F1/00

    CPC classification number: G03F7/06 ,  C07F1/005

    Abstract: A resist compound is represented by Formula 1:




    wherein R1 is an alkyl group having 1 to 12 carbon atoms, an alkenyl group having 1 to 12 carbon atoms, or a hydrocarbon ring group having 3 to 12 carbon atoms, and A bonded to R1 is O or NR2, wherein R2 is hydrogen, an alkyl group having 1 to 12 carbon atoms, an alkenyl group having 1 to 12 carbon atoms, or a hydrocarbon ring group having 3 to 12 carbon atoms. A resist composition includes the resist compound and an organic solvent. A method for forming a resist pattern includes forming a resist layer by applying the resist composition including the resist compound on a substrate, irradiating light onto the resist layer to provide an irradiated resist layer, and developing the irradiated resist layer to form a resist pattern.

    SYSTEM AND METHOD FOR ESTIMATING SOLUBILITY
    3.
    发明申请
    SYSTEM AND METHOD FOR ESTIMATING SOLUBILITY 有权

    公开(公告)号：US20220415450A1

    公开(公告)日：2022-12-29

    申请号：US17850722

    申请日：2022-06-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： THANH CUONG NGUYEN ,  DAEKEON KIM ,  JIYOUNG PARK ,  HYUNWOO KIM ,  SEUNGMIN LEE ,  INKOOK JANG ,  SUKKOO HONG

    IPC: G16C20/30 ,  G16C20/70

    Abstract: A method of estimating solubility includes obtaining input data representing a chemical structure of a target material; generating at least one descriptor based on the input data; obtaining at least one solubility parameter by providing the at least one descriptor to a machine learning model trained based on chemical structures and sample solubility parameters of sample materials; and calculating the solubility based on the at least one solubility parameter, wherein the at least one descriptor includes at least one of a zero-dimensional descriptor, a one-dimensional descriptor, a two-dimensional descriptor, or a three-dimensional descriptor, each representing the chemical structure of the target material.

    SILICON COMPOUNDS AND METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME
    4.
    发明申请
    SILICON COMPOUNDS AND METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME 有权

    公开(公告)号：US20220380390A1

    公开(公告)日：2022-12-01

    申请号：US17573691

    申请日：2022-01-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： HYUNWOO KIM ,  SUNGGI KIM ,  YEONGHUN KIM ,  SAMDONG LEE ,  SEJIN JANG ,  GYUHEE PARK ,  YOUNJOUNG CHO ,  BYUNGKEUN HWANG

    IPC: C07F7/08 ,  H01L21/768

    Abstract: Silicon compounds may be represented by the following formula: Each of Ra, Rb, and Rc may be a hydrogen atom, a halogen atom, a C1-C7 alkyl group, an amino group, a C1-C7 alkyl amino group, or a C1-C7 alkoxy group, Rd may be a C1-C7 alkyl group, a C1-C7 alkyl amino group, or a silyl group represented by a formula of *—Si(X1)(X2)(X3). Each of X1, X2, and X3 may be a hydrogen atom, a halogen atom, a C1-C7 alkyl group, an amino group, a C1-C7 alkyl amino group, or a C1-C7 alkoxy group, and * is a bonding site. In some embodiments, when Rb is the C1-C7 alkyl amino group and Rd is the C1-C7 alkyl group, Rb may be connected to Rd to form a ring. To manufacture an integrated circuit (IC) device, a silicon-containing film may be formed on a substrate using the silicon compound of the formula provided above.

    PHOTORESIST COMPOSITIONS AND METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME
    7.
    发明申请
    PHOTORESIST COMPOSITIONS AND METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME 有权

    公开(公告)号：US20220252982A1

    公开(公告)日：2022-08-11

    申请号：US17485727

    申请日：2021-09-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： SUKKOO HONG ,  HYUNWOO KIM ,  HYUNJI SONG

    IPC: G03F7/039 ,  G03F7/004 ,  G03F7/32

    Abstract: Photoresist compositions may include a photosensitive polymer, a photoacid generator (PAG), and a solvent. The photosensitive polymer may include a first repeating unit having a structure of Formula: wherein R1 is an oxygen atom or a methyl group, and R2 is a nitrobenzyl-based photo-labile protecting group. In methods of manufacturing an integrated circuit (IC), a photoresist film is formed on a lower film by using the photoresist composition including the photosensitive polymer, the PAG, and the solvent. A hydroxystyrene repeating unit is deprotected in a first area of the photoresist film by exposing the first area of the photoresist film to light, and thus, the nitrobenzyl-based photo-labile protecting group is separated from the hydroxystyrene repeating unit and a sensitizer is generated from the hydroxystyrene repeating unit. The exposed first area is removed using a developer.

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