公开(公告)号：US20240250001A1

公开(公告)日：2024-07-25

申请号：US18532186

申请日：2023-12-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HOYOUNG TANG ,  TAE-HYUNG KIM ,  JUNGHO DO

IPC: H01L23/48 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L23/481 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/7869

Abstract: A semiconductor device including: first and second transistors on a substrate; an isolation transistor provided between the first and second transistors; a lower power line in a lower portion of the substrate; and a back-side gate contact penetrating the substrate and connected to the lower power line and a dummy gate electrode of the isolation transistor.