公开(公告)号：US09628034B2

公开(公告)日：2017-04-18

申请号：US14798675

申请日：2015-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Yong Jeong ,  Jin-Soo Kim ,  Seung-Hwan Baek ,  Ha-Joon Shin

IPC: H03F3/45 ,  H03F3/30

CPC classification number: H03F3/303 ,  G09G2310/0291 ,  G09G2320/0252 ,  G09G2330/021 ,  H03F3/45219 ,  H03F2203/30015 ,  H03F2203/30021 ,  H03F2203/45112 ,  H03F2203/45116 ,  H03F2203/45244 ,  H03F2203/45274 ,  H03F2203/45512

Abstract: An operational amplifying circuit are provided. The operational amplifying circuit includes a control circuit, pull-up and pull-down transistors, first and second bias circuits, and a bias voltage generating circuit. The control circuit includes first and second input terminals, and is configured to change, when an input voltage transitions to a first level, a voltage level of a pull-up node and a pull-down node to a second level different from the first level. The pull-up transistor provides a power supply voltage to the output terminal. The pull-down transistor connects the output terminal to a ground voltage. The first bias circuit provides a first bias current to the control circuit. The bias voltage generating circuit generates a bias voltage when the voltage level of at least one of the pull-up and pull-down nodes reaches a threshold voltage level, and the second bias circuit provides a second bias current to the control circuit.