公开(公告)号：US20240258313A1

公开(公告)日：2024-08-01

申请号：US18633722

申请日：2024-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bok Young LEE ,  Young Mook OH ,  Hyung Goo LEE ,  Hae Geon JUNG ,  Seung Mo HA

IPC: H01L27/088 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L27/0886 ,  H01L21/76232 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0924

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a first base fin protruding from the substrate and extending in a first direction, and a first fin type pattern protruding from the first base fin and extending in the first direction. The first base fin includes a first sidewall and a second sidewall, the first and second sidewalls extending in the first direction, the first sidewall opposite to the second sidewall, the first sidewall of the first base fin at least partially defines a first deep trench, the second sidewall of the first base fin at least partially defines a second deep trench, and a depth of the first deep trench is greater than a depth of the second deep trench.

公开(公告)号：US20220344461A1

公开(公告)日：2022-10-27

申请号：US17516192

申请日：2021-11-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hae Geon JUNG ,  Dong Kwon KIM ,  Cheol KIM

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/08

Abstract: A semiconductor device includes a substrate, a first active pattern that includes a first side wall and a second side wall opposite to the first side wall in a second horizontal direction, a first insulating structure in a first trench extending in the first horizontal direction on the first side wall of the first active pattern, a second insulating structure in a second trench extending in the first horizontal direction on the second side of the first active pattern, and includes a first insulating layer on side walls and a bottom surface of the second trench, and a second insulating layer in the second trench on the first insulating layer, a gate-cut extending in the first horizontal direction on the first insulating structure, and a gate electrode extending in the second horizontal direction on the first active pattern.

公开(公告)号：US20220231015A1

公开(公告)日：2022-07-21

申请号：US17509265

申请日：2021-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bok Young LEE ,  Young Mook OH ,  Hyung Goo LEE ,  Hae Geon JUNG ,  Seung Mo HA

IPC: H01L27/088 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/762

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a first base fin protruding from the substrate and extending in a first direction, and a first fin type pattern protruding from the first base fin and extending in the first direction. The first base fin includes a first sidewall and a second sidewall, the first and second sidewalls extending in the first direction, the first sidewall opposite to the second sidewall, the first sidewall of the first base fin at least partially defines a first deep trench, the second sidewall of the first base fin at least partially defines a second deep trench, and a depth of the first deep trench is greater than a depth of the second deep trench.