公开(公告)号：US11152368B2

公开(公告)日：2021-10-19

申请号：US16908833

申请日：2020-06-23

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Yoonyoung Choi ,  Byunghyun Lee ,  Seungjin Kim ,  Byeongjoo Ku ,  Sangjae Park ,  Hangeol Lee

IPC分类号： H01L27/108 ,  H01L21/768 ,  H01L23/532

摘要： A semiconductor device includes a substrate, a storage node electrode disposed on the substrate, a dielectric layer at least partially covering the storage node electrode, and a plate electrode dispose on the dielectric layer. The storage node electrode has a pillar shape, and includes a seam disposed therein. The storage node electrode includes a concave side surface disposed at a higher level than the seam.

公开(公告)号：US20210151439A1

公开(公告)日：2021-05-20

申请号：US16908833

申请日：2020-06-23

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： YOONYOUNG CHOI ,  Byunghyun Lee ,  Seungjin Kim ,  Byeongjoo Ku ,  Sangjae Park ,  Hangeol Lee

IPC分类号： H01L27/108 ,  H01L23/532 ,  H01L21/768

摘要： A semiconductor device includes a substrate, a storage node electrode disposed on the substrate, a dielectric layer at least partially covering the storage node electrode, and a plate electrode dispose on the dielectric layer. The storage node electrode has a pillar shape, and includes a seam disposed therein. The storage node electrode includes a concave side surface disposed at a higher level than the seam.

公开(公告)号：US11462610B2

公开(公告)日：2022-10-04

申请号：US16947090

申请日：2020-07-17

申请人： Samsung Electronics Co., Ltd.

发明人： Yoonyoung Choi ,  Byunghyun Lee ,  Byeongjoo Ku ,  Seungjin Kim ,  Sangjae Park ,  Jinwoo Bae ,  Hangeol Lee ,  Bowo Choi ,  Hyunsil Hong

IPC分类号： H01L27/108 ,  H01L49/02

摘要： Capacitor forming methods may include sequentially forming a first mold layer, a first support material layer, and a second mold layer on a substrate, forming a mask pattern on the second mold layer, forming a recess in the second mold layer, the first support material layer, and the first mold layer using the mask pattern as a mask, forming a lower electrode in the recess, removing the mask pattern by a dry cleaning process, reducing a width of an upper portion of the lower electrode, removing the first mold layer, forming a dielectric layer on a surface of the lower electrode, and forming an upper electrode on the dielectric layer.