公开(公告)号：US11424202B2

公开(公告)日：2022-08-23

申请号：US16674056

申请日：2019-11-05

申请人： Samsung Electronics Co., Ltd.

发明人： Bowo Choi ,  Youngtak Kim ,  Sangjine Park ,  Suji Kim ,  Jaeuk Shin ,  Hyunjung Lee ,  Jihun Cheon

IPC分类号： H01L27/108 ,  H01L23/00

摘要： A semiconductor device includes a landing pad, a first insulating pattern in contact with a lower portion of a side surface of the landing pad, a pad oxide layer having a lateral portion disposed on a portion of an upper surface of the landing pad and a vertical portion in contact with an upper portion of the side surface of the landing pad, a second insulating pattern in contact with an upper surface of the first insulating pattern and covering the first insulating pattern and the pad oxide layer, and a lower electrode that vertically passes through the second insulating pattern and is in contact with a portion of the upper surface and an upper portion of a side surface of the landing pad.

公开(公告)号：US11462610B2

公开(公告)日：2022-10-04

申请号：US16947090

申请日：2020-07-17

申请人： Samsung Electronics Co., Ltd.

发明人： Yoonyoung Choi ,  Byunghyun Lee ,  Byeongjoo Ku ,  Seungjin Kim ,  Sangjae Park ,  Jinwoo Bae ,  Hangeol Lee ,  Bowo Choi ,  Hyunsil Hong

IPC分类号： H01L27/108 ,  H01L49/02

摘要： Capacitor forming methods may include sequentially forming a first mold layer, a first support material layer, and a second mold layer on a substrate, forming a mask pattern on the second mold layer, forming a recess in the second mold layer, the first support material layer, and the first mold layer using the mask pattern as a mask, forming a lower electrode in the recess, removing the mask pattern by a dry cleaning process, reducing a width of an upper portion of the lower electrode, removing the first mold layer, forming a dielectric layer on a surface of the lower electrode, and forming an upper electrode on the dielectric layer.