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公开(公告)号：US09299693B2
公开(公告)日：2016-03-29
申请号：US14094039
申请日：2013-12-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaehyok Ko , Hangu Kim , Minchang Ko , Kyoungki Jeon
IPC: H01L29/739 , H01L27/02
CPC classification number: H01L27/027
Abstract: An electrostatic discharge protection device may include a first conductivity type well, a second conductivity well; a first doping region and a second doping region which are formed in the first conductivity type well and have different conductivity types from each other; a third doping region and a fourth doping region which are formed in the second conductivity type well and have different conductivity types from each other; and a fifth doping region formed in the second conductivity type well between the first and second doping regions and the third and fourth doping regions.
Abstract translation: 静电放电保护装置可以包括第一导电型阱，第二导电阱; 第一掺杂区域和第二掺杂区域，其形成在第一导电类型阱中并具有彼此不同的导电类型; 第三掺杂区和第四掺杂区，形成在第二导电类型阱中并具有彼此不同的导电类型; 以及形成在第一和第二掺杂区域之间的第二导电类型阱中的第五掺杂区域以及第三和第四掺杂区域。
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公开(公告)号：US20140151743A1
公开(公告)日：2014-06-05
申请号：US14094039
申请日：2013-12-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaehyok Ko , Hangu Kim , Minchang Ko , Kyoungki Jeon
IPC: H01L29/739
CPC classification number: H01L27/027
Abstract: An electrostatic discharge protection device may include a first conductivity type well, a second conductivity well; a first doping region and a second doping region which are formed in the first conductivity type well and have different conductivity types from each other; a third doping region and a fourth doping region which are formed in the second conductivity type well and have different conductivity types from each other; and a fifth doping region formed in the second conductivity type well between the first and second doping regions and the third and fourth doping regions.
Abstract translation: 静电放电保护装置可以包括第一导电型阱，第二导电阱; 第一掺杂区域和第二掺杂区域，其形成在第一导电类型阱中并具有彼此不同的导电类型; 第三掺杂区和第四掺杂区，形成在第二导电类型阱中并具有彼此不同的导电类型; 以及形成在第一和第二掺杂区域之间的第二导电类型阱中的第五掺杂区域以及第三和第四掺杂区域。
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3.发明授权公开(公告)号：US09875975B2
公开(公告)日：2018-01-23
申请号：US14695418
申请日：2015-04-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jaehyok Ko , Minchang Ko , Hangu Kim
CPC classification number: H01L23/60 , H01L27/0266 , H01L2924/0002 , H02H9/04 , H02H9/046 , H01L2924/00
Abstract: A semiconductor device includes a first driver configured to pull up a voltage level of a pad to a first power voltage in response to a driving signal, a second driver configured to pull down the voltage level of the pad to a second power voltage in response to the driving signal, a switch protection resistor configured to change an electrical resistance between the pad and the second driver in response to a switch control signal, and an ESD detector configured to detect a voltage level of the first or second power voltage and generate the switch control signal.
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公开(公告)号：US10475781B2
公开(公告)日：2019-11-12
申请号：US15364422
申请日：2016-11-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sungpil Jang , Minchang Ko , ChangSu Kim , Hangu Kim , Kyoungki Jeon
Abstract: An electrostatic discharge protection device includes: a substrate of a second conductivity type, the substrate including a well of a first conductivity type; a cathode electrode connected to the substrate; a first diffusion region of the second conductivity type and a second diffusion region of the first conductivity type, formed in the substrate and connected to the cathode electrode; an anode electrode connected to the substrate; a third diffusion region of the second conductivity type and a fourth diffusion region of the first conductivity type, formed in the well and connected to the anode electrode; a fifth diffusion region of the first conductivity type, formed on a border of the substrate and the well; and a sixth diffusion region of the first conductivity type, formed in the substrate between the first and second diffusion regions and the fifth diffusion region and configured to receive a bias voltage from outside.
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