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公开(公告)号：US09299693B2
公开(公告)日：2016-03-29
申请号：US14094039
申请日：2013-12-02
发明人： Jaehyok Ko , Hangu Kim , Minchang Ko , Kyoungki Jeon
IPC分类号： H01L29/739 , H01L27/02
CPC分类号： H01L27/027
摘要： An electrostatic discharge protection device may include a first conductivity type well, a second conductivity well; a first doping region and a second doping region which are formed in the first conductivity type well and have different conductivity types from each other; a third doping region and a fourth doping region which are formed in the second conductivity type well and have different conductivity types from each other; and a fifth doping region formed in the second conductivity type well between the first and second doping regions and the third and fourth doping regions.
摘要翻译： 静电放电保护装置可以包括第一导电型阱，第二导电阱; 第一掺杂区域和第二掺杂区域，其形成在第一导电类型阱中并具有彼此不同的导电类型; 第三掺杂区和第四掺杂区，形成在第二导电类型阱中并具有彼此不同的导电类型; 以及形成在第一和第二掺杂区域之间的第二导电类型阱中的第五掺杂区域以及第三和第四掺杂区域。
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公开(公告)号：US20140151743A1
公开(公告)日：2014-06-05
申请号：US14094039
申请日：2013-12-02
发明人： Jaehyok Ko , Hangu Kim , Minchang Ko , Kyoungki Jeon
IPC分类号： H01L29/739
CPC分类号： H01L27/027
摘要： An electrostatic discharge protection device may include a first conductivity type well, a second conductivity well; a first doping region and a second doping region which are formed in the first conductivity type well and have different conductivity types from each other; a third doping region and a fourth doping region which are formed in the second conductivity type well and have different conductivity types from each other; and a fifth doping region formed in the second conductivity type well between the first and second doping regions and the third and fourth doping regions.
摘要翻译： 静电放电保护装置可以包括第一导电型阱，第二导电阱; 第一掺杂区域和第二掺杂区域，其形成在第一导电类型阱中并具有彼此不同的导电类型; 第三掺杂区和第四掺杂区，形成在第二导电类型阱中并具有彼此不同的导电类型; 以及形成在第一和第二掺杂区域之间的第二导电类型阱中的第五掺杂区域以及第三和第四掺杂区域。
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3.发明授权公开(公告)号：US09875975B2
公开(公告)日：2018-01-23
申请号：US14695418
申请日：2015-04-24
发明人： Jaehyok Ko , Minchang Ko , Hangu Kim
CPC分类号： H01L23/60 , H01L27/0266 , H01L2924/0002 , H02H9/04 , H02H9/046 , H01L2924/00
摘要： A semiconductor device includes a first driver configured to pull up a voltage level of a pad to a first power voltage in response to a driving signal, a second driver configured to pull down the voltage level of the pad to a second power voltage in response to the driving signal, a switch protection resistor configured to change an electrical resistance between the pad and the second driver in response to a switch control signal, and an ESD detector configured to detect a voltage level of the first or second power voltage and generate the switch control signal.
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公开(公告)号：US12002890B2
公开(公告)日：2024-06-04
申请号：US17585284
申请日：2022-01-26
发明人： Jaehyun Yoo , Kyuok Lee , Uihui Kwon , Junhyeok Kim , Yongwoo Jeon , Dawon Jeong , Jaehyok Ko
IPC分类号： H01L29/86 , H01L29/06 , H01L29/40 , H01L29/861
CPC分类号： H01L29/861 , H01L29/0634 , H01L29/404 , H01L29/0649
摘要： A semiconductor protection device includes: an N-type epitaxial layer, a device isolation layer disposed in the N-type epitaxial layer, an N-type drift region disposed below the device isolation layer, an N-type well disposed in the N-type drift region, first and second P-type drift regions, respectively disposed to be in contact with the device isolation layer, and spaced apart from the N-type drift region, first and second P-type doped regions, respectively disposed in the first and second P-type drift regions, first and second N-type floating wells, respectively disposed in the first and second P-type drift regions to be spaced apart from the first and second P-type doped regions, and disposed to be in contact with the device isolation layer, and first and second contact layer, respectively disposed to cover the first and second N-type floating well, to be in contact with the device isolation layer.
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