公开(公告)号：US11683934B2

公开(公告)日：2023-06-20

申请号：US17360013

申请日：2021-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Jin Jung ,  Bong Tae Park ,  Ho Jun Seong

IPC: H01L23/522 ,  H01L27/11582 ,  H01L27/11573 ,  H01L27/11565 ,  H01L27/11575 ,  H01L23/528

CPC classification number: H01L27/11582 ,  H01L23/528 ,  H01L23/5226 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/11575

Abstract: A nonvolatile memory device with improved operation performance and reliability, and a method for fabricating the same are provided. The nonvolatile memory device includes a substrate, a peripheral circuit structure on the substrate, a mold structure including a plurality of insulating patterns and a plurality of gate electrodes stacked alternately on the peripheral circuit structure, a channel structure penetrating the mold structure, a first impurity pattern in contact with first portions of the channel structure and having a first conductivity type, on the mold structure, and a second impurity pattern in contact with second portions of the channel structure and having a second conductivity type different from the first conductivity type, on the mold structure.

公开(公告)号：US12127408B2

公开(公告)日：2024-10-22

申请号：US18312782

申请日：2023-05-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Jin Jung ,  Bong Tae Park ,  Ho Jun Seong

IPC: H10B43/27 ,  H01L23/522 ,  H01L23/528 ,  H10B43/10 ,  H10B43/40 ,  H10B43/50

CPC classification number: H10B43/27 ,  H01L23/5226 ,  H01L23/528 ,  H10B43/10 ,  H10B43/40 ,  H10B43/50

Abstract: A nonvolatile memory device with improved operation performance and reliability, and a method for fabricating the same are provided. The nonvolatile memory device includes a substrate, a peripheral circuit structure on the substrate, a mold structure including a plurality of insulating patterns and a plurality of gate electrodes stacked alternately on the peripheral circuit structure, a channel structure penetrating the mold structure, a first impurity pattern in contact with first portions of the channel structure and having a first conductivity type, on the mold structure, and a second impurity pattern in contact with second portions of the channel structure and having a second conductivity type different from the first conductivity type, on the mold structure.

公开(公告)号：US11081499B2

公开(公告)日：2021-08-03

申请号：US16818294

申请日：2020-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Jin Jung ,  Bong Tae Park ,  Ho Jun Seong

IPC: H01L27/11582 ,  H01L27/11573 ,  H01L27/11565 ,  H01L27/11575 ,  H01L23/522 ,  H01L23/528

Abstract: A nonvolatile memory device with improved operation performance and reliability, and a method for fabricating the same are provided. The nonvolatile memory device includes a substrate, a peripheral circuit structure on the substrate, a mold structure including a plurality of insulating patterns and a plurality of gate electrodes stacked alternately on the peripheral circuit structure, a channel structure penetrating the mold structure, a first impurity pattern in contact with first portions of the channel structure and having a first conductivity type, on the mold structure, and a second impurity pattern in contact with second portions of the channel structure and having a second conductivity type different from the first conductivity type, on the mold structure.