公开(公告)号：US20220333247A1

公开(公告)日：2022-10-20

申请号：US17501146

申请日：2021-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Gu KIM ,  Homin SON ,  Junghyeon KIM ,  Hangkyu SONG ,  Eunha OH ,  Oleg FEYGENSON ,  Donghyun JANG ,  Sung-Woo JEON ,  Wooyeon HWANG

IPC: C23C16/46 ,  C23C16/455 ,  H01L21/02

Abstract: An apparatus for depositing a thin layer and associated method, the apparatus including a process chamber; a support in the process chamber, substrates being supportable on the support at different heights; a gas injector configured to inject a gas into the process chamber; and a heater configured to heat the process chamber, wherein the gas injector includes a first injector configured to inject a first gas; and a second injector configured to inject a second gas, a flow rate of the first gas injected from the first injector ranges from 120 sccm to 240 sccm, and a flow rate of the second gas injected from the second injector ranges from 1,200 sccm to 2,400 sccm.

公开(公告)号：US20220285174A1

公开(公告)日：2022-09-08

申请号：US17499988

申请日：2021-10-13

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Byunghwan KONG ,  Heeyeon KIM ,  Homin SON ,  Geunkyu CHOI

IPC: H01L21/67

Abstract: A substrate processing method includes: disposing a wafer in a wafer region of a tube; injecting an inert gas into a gap region, of the tube, between an inner side wall of the tube and the wafer disposed in the wafer region; and injecting a process gas into the wafer region of the tube, wherein a pressure of the gap region of the tube is higher than a pressure at an edge of the wafer region of the tube during the injection of the inert gas and the process gas.