公开(公告)号：US20250162000A1

公开(公告)日：2025-05-22

申请号：US18658495

申请日：2024-05-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woong LEE ,  Giduck KWEON ,  Taewoo KIM ,  Ha-Sung KIM ,  Hyouncheol KIM ,  Hanearl JUNG ,  Ahjin CHO ,  Chin Moo CHO ,  Wooyeon HWANG

IPC: B08B9/032

Abstract: A substrate processing apparatus cleaning method includes: inserting a boat into a process tube; removing, by performing a first removal process, a first material deposited in the process tube; and removing, by performing a second removal process, a second material deposited in the process tube by the first removal process, wherein the first removal process includes supplying the process tube with a first gas, wherein the second removal process includes supplying the process tube with a second gas, wherein one of the first gas and the second gas includes a chlorine-based gas, and wherein the other of the first gas and the second gas includes a fluorine-based gas.

公开(公告)号：US20220333247A1

公开(公告)日：2022-10-20

申请号：US17501146

申请日：2021-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Gu KIM ,  Homin SON ,  Junghyeon KIM ,  Hangkyu SONG ,  Eunha OH ,  Oleg FEYGENSON ,  Donghyun JANG ,  Sung-Woo JEON ,  Wooyeon HWANG

IPC: C23C16/46 ,  C23C16/455 ,  H01L21/02

Abstract: An apparatus for depositing a thin layer and associated method, the apparatus including a process chamber; a support in the process chamber, substrates being supportable on the support at different heights; a gas injector configured to inject a gas into the process chamber; and a heater configured to heat the process chamber, wherein the gas injector includes a first injector configured to inject a first gas; and a second injector configured to inject a second gas, a flow rate of the first gas injected from the first injector ranges from 120 sccm to 240 sccm, and a flow rate of the second gas injected from the second injector ranges from 1,200 sccm to 2,400 sccm.