公开(公告)号：US10586852B2

公开(公告)日：2020-03-10

申请号：US16156062

申请日：2018-10-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Han Lee ,  Myung Il Kang ,  Jae Hwan Lee ,  Sun Wook Kim ,  Seong Ju Kim ,  Sung Jin Park ,  Hong Seon Yang ,  Joo Hee Jung

IPC: H01L29/76 ,  H01L29/94 ,  H01L29/423 ,  H01L29/78 ,  H01L29/49 ,  H01L29/66

Abstract: A semiconductor device including a first fin protruding on a substrate and extending in a first direction; a first gate electrode on the first fin, the first gate electrode intersecting the first fin; a first trench formed within the first fin at a side of the first gate electrode; a first epitaxial layer filling a portion of the first trench, wherein a thickness of the first epitaxial layer becomes thinner closer to a sidewall of the first trench; and a second epitaxial layer filling the first trench on the first epitaxial layer, wherein a boron concentration of the second epitaxial layer is greater than a boron concentration of the first epitaxial layer.

公开(公告)号：US10109717B2

公开(公告)日：2018-10-23

申请号：US15596152

申请日：2017-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Han Lee ,  Myung Il Kang ,  Jae Hwan Lee ,  Sun Wook Kim ,  Seong Ju Kim ,  Sung Jin Park ,  Hong Seon Yang ,  Joo Hee Jung

IPC: H01L29/76 ,  H01L29/94 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66 ,  H01L29/49

Abstract: A semiconductor device including a first fin protruding on a substrate and extending in a first direction; a first gate electrode on the first fin, the first gate electrode intersecting the first fin; a first trench formed within the first fin at a side of the first gate electrode; a first epitaxial layer filling a portion of the first trench, wherein a thickness of the first epitaxial layer becomes thinner closer to a sidewall of the first trench; and a second epitaxial layer filling the first trench on the first epitaxial layer, wherein a boron concentration of the second epitaxial layer is greater than a boron concentration of the first epitaxial layer.