公开(公告)号：US11710770B2

公开(公告)日：2023-07-25

申请号：US17575918

申请日：2022-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo Cheol Shin ,  Sun Wook Kim ,  Seung Min Song ,  Nam Hyun Lee

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/423 ,  H01L27/092

CPC classification number: H01L29/0673 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/42392

Abstract: A semiconductor device includes a substrate having a first region and a second region, first and second nanowires disposed sequentially on the substrate in the first region, and extending respectively in a first direction, third and fourth nanowires disposed sequentially on the substrate in the second region, and extending respectively in the first direction, a first inner spacer between the first nanowire and the second nanowire, and including hydrogen of a first hydrogen mole fraction, and a second inner spacer between the third nanowire and the fourth nanowire, and including hydrogen of a second hydrogen mole fraction that is greater than the first hydrogen mole fraction.

公开(公告)号：US11683925B2

公开(公告)日：2023-06-20

申请号：US17387192

申请日：2021-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Gil Yang ,  Sun Wook Kim ,  Jun Beom Park ,  Tae Young Kim ,  Geum Jong Bae

IPC: H01L23/528 ,  H01L29/06 ,  H01L29/786 ,  H01L29/775 ,  B82Y10/00 ,  H01L27/02 ,  H01L29/423 ,  H10B10/00

CPC classification number: H10B10/125 ,  H01L23/528

Abstract: A semiconductor device includes first and second fin type patterns, first and second gate patterns intersecting the first and second fin type patterns, third and fourth gate patterns intersecting the first fin type pattern between the first and the second gate patterns, a fifth gate pattern intersecting the second fin type pattern, a sixth gate pattern intersecting the second fin type pattern, first to third semiconductor patterns disposed among the first, the third, the fourth and the second gate patterns, and fourth to sixth semiconductor patterns disposed among the first, the fifth, the sixth and the second gate patterns. The first semiconductor pattern to the fourth semiconductor pattern and the sixth semiconductor pattern are electrically connected to a wiring structure, and the fifth semiconductor pattern is not connected to the wiring structure.

公开(公告)号：US10586852B2

公开(公告)日：2020-03-10

申请号：US16156062

申请日：2018-10-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Han Lee ,  Myung Il Kang ,  Jae Hwan Lee ,  Sun Wook Kim ,  Seong Ju Kim ,  Sung Jin Park ,  Hong Seon Yang ,  Joo Hee Jung

IPC: H01L29/76 ,  H01L29/94 ,  H01L29/423 ,  H01L29/78 ,  H01L29/49 ,  H01L29/66

Abstract: A semiconductor device including a first fin protruding on a substrate and extending in a first direction; a first gate electrode on the first fin, the first gate electrode intersecting the first fin; a first trench formed within the first fin at a side of the first gate electrode; a first epitaxial layer filling a portion of the first trench, wherein a thickness of the first epitaxial layer becomes thinner closer to a sidewall of the first trench; and a second epitaxial layer filling the first trench on the first epitaxial layer, wherein a boron concentration of the second epitaxial layer is greater than a boron concentration of the first epitaxial layer.

公开(公告)号：US11227914B2

公开(公告)日：2022-01-18

申请号：US16776677

申请日：2020-01-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo Cheol Shin ,  Sun Wook Kim ,  Seung Min Song ,  Nam Hyun Lee

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/423 ,  H01L27/092

Abstract: A semiconductor device includes a substrate having a first region and a second region, first and second nanowires disposed sequentially on the substrate in the first region, and extending respectively in a first direction, third and fourth nanowires disposed sequentially on the substrate in the second region, and extending respectively in the first direction, a first inner spacer between the first nanowire and the second nanowire, and including hydrogen of a first hydrogen mole fraction, and a second inner spacer between the third nanowire and the fourth nanowire, and including hydrogen of a second hydrogen mole fraction that is greater than the first hydrogen mole fraction.

公开(公告)号：US11107822B2

公开(公告)日：2021-08-31

申请号：US16722081

申请日：2019-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Gil Yang ,  Sun Wook Kim ,  Jun Beom Park ,  Tae Young Kim ,  Geum Jong Bae

IPC: H01L27/11 ,  H01L23/528 ,  H01L29/06 ,  H01L29/775 ,  H01L27/02 ,  H01L29/423 ,  H01L29/78

Abstract: A semiconductor device includes first and second fin type patterns, first and second gate patterns intersecting the first and second fin type patterns, third and fourth gate patterns intersecting the first fin type pattern between the first and the second gate patterns, a fifth gate pattern intersecting the second fin type pattern, a sixth gate pattern intersecting the second fin type pattern, first to third semiconductor patterns disposed among the first, the third, the fourth and the second gate patterns, and fourth to sixth semiconductor patterns disposed among the first, the fifth, the sixth and the second gate patterns. The first semiconductor pattern to the fourth semiconductor pattern and the sixth semiconductor pattern are electrically connected to a wiring structure, and the fifth semiconductor pattern is not connected to the wiring structure.

公开(公告)号：US10109717B2

公开(公告)日：2018-10-23

申请号：US15596152

申请日：2017-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Han Lee ,  Myung Il Kang ,  Jae Hwan Lee ,  Sun Wook Kim ,  Seong Ju Kim ,  Sung Jin Park ,  Hong Seon Yang ,  Joo Hee Jung

IPC: H01L29/76 ,  H01L29/94 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66 ,  H01L29/49

Abstract: A semiconductor device including a first fin protruding on a substrate and extending in a first direction; a first gate electrode on the first fin, the first gate electrode intersecting the first fin; a first trench formed within the first fin at a side of the first gate electrode; a first epitaxial layer filling a portion of the first trench, wherein a thickness of the first epitaxial layer becomes thinner closer to a sidewall of the first trench; and a second epitaxial layer filling the first trench on the first epitaxial layer, wherein a boron concentration of the second epitaxial layer is greater than a boron concentration of the first epitaxial layer.