公开(公告)号：US20230084281A1

公开(公告)日：2023-03-16

申请号：US17750586

申请日：2022-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Na-Young Kim ,  Seongho Kim ,  Hoonmin Kim

IPC: H01L27/11531 ,  H01L27/11529

Abstract: A semiconductor device includes a substrate including cell and peripheral regions. Landing pads and contact plugs are on the cell and peripheral regions, respectively. A first filler pattern fills regions between the landing pads and between the contact plugs. Outer voids are in the first filler pattern and include first and second outer voids on the cell and peripheral regions, respectively. A second filler pattern covers the first filler pattern and the contact plugs and fills at least a portion of the second outer void. An inner void is in the second outer void and enclosed by the second filler pattern. The first and second filler patterns include the same material. On the cell region, at least a portion of the second filler pattern is located below top surfaces of the landing pads, and a bottom surface of the second filler pattern is partially exposed by the first outer void.

公开(公告)号：US12279427B2

公开(公告)日：2025-04-15

申请号：US17750586

申请日：2022-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Na-Young Kim ,  Seongho Kim ,  Hoonmin Kim

IPC: H10B41/42 ,  H10B41/41

Abstract: A semiconductor device includes a substrate including cell and peripheral regions. Landing pads and contact plugs are on the cell and peripheral regions, respectively. A first filler pattern fills regions between the landing pads and between the contact plugs. Outer voids are in the first filler pattern and include first and second outer voids on the cell and peripheral regions, respectively. A second filler pattern covers the first filler pattern and the contact plugs and fills at least a portion of the second outer void. An inner void is in the second outer void and enclosed by the second filler pattern. The first and second filler patterns include the same material. On the cell region, at least a portion of the second filler pattern is located below top surfaces of the landing pads, and a bottom surface of the second filler pattern is partially exposed by the first outer void.