公开(公告)号：US09431416B2

公开(公告)日：2016-08-30

申请号：US14525361

申请日：2014-10-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Phil-ouk Nam ,  Jun-kyu Yang ,  Hun-hyeong Lim ,  Ki-hyun Hwang ,  Jae-young Ahn ,  Dong-chul Yoo

IPC: H01L21/02 ,  H01L27/115 ,  H01L29/792 ,  H01L29/66

CPC classification number: H01L27/11582 ,  H01L27/11524 ,  H01L27/11575 ,  H01L29/66666 ,  H01L29/66833 ,  H01L29/7926

Abstract: A vertical-type nonvolatile memory device includes a first vertical channel structure, and first and second stacked structure. The first vertical channel structure extends vertically on a substrate. The first stacked structure includes gate electrodes and first interlayer insulating layers. The gate layers and the first interlayer insulating layers are alternately and vertically stacked on each other. The first stacked structure is disposed on a first sidewall of the first vertical channel structure. The second stacked structure includes first sacrificial layers and second interlayer insulating layers. The first sacrificial layers and the second interlayer insulating layers are alternately and vertically stacked on each other. The second stacked structure is disposed on a second sidewall of the first vertical channel structure. The first sacrificial layers is formed of a polysilicon layer.

Abstract translation: 垂直型非易失性存储器件包括第一垂直沟道结构以及第一和第二堆叠结构。 第一垂直通道结构在衬底上垂直延伸。 第一堆叠结构包括栅电极和第一层间绝缘层。 栅极层和第一层间绝缘层彼此交替地和垂直地堆叠。 第一堆叠结构设置在第一垂直通道结构的第一侧壁上。 第二堆叠结构包括第一牺牲层和第二层间绝缘层。 第一牺牲层和第二层间绝缘层彼此交替地和垂直地堆叠。 第二堆叠结构设置在第一垂直通道结构的第二侧壁上。 第一牺牲层由多晶硅层形成。

公开(公告)号：US10224185B2

公开(公告)日：2019-03-05

申请号：US14689559

申请日：2015-04-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-jin Noh ,  Kwang-min Park ,  Eun-sung Seo ,  Young-chang Song ,  Jae-young Ahn ,  Hun-hyeong Lim ,  Ji-hoon Choi

IPC: C23C16/455 ,  H01J37/32

Abstract: A substrate processing apparatus including a process chamber configured to receive a plurality of substrates oriented in a horizontal manner and vertically arranged with respect to the process chamber, a process gas supply unit configured to supply at least one process gas to the process chamber through a process gas supply nozzle, the process gas supply nozzle along an inner wall of the process chamber in a direction in which the substrates are sacked, an exhaust unit configured to exhaust the process gas from the process chamber, and a blocking gas supply unit configured to supply a blocking gas through a blocking gas injector provided in a circumferential direction of the process chamber such that a flow of the process gas in the process chamber is controlled may be provided.