公开(公告)号：US20170004971A1

公开(公告)日：2017-01-05

申请号：US15058183

申请日：2016-03-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Choong-Yeol KIM ,  Myung-Beom PARK ,  Han-Gyul KO ,  Hwi-Hyeon OH ,  Hye-Young JIN

IPC: H01L21/265 ,  H01L21/266 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L21/2658 ,  H01J37/00 ,  H01J37/08 ,  H01J37/3171 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/823814 ,  H01L29/0623 ,  H01L29/1083 ,  H01L29/66492 ,  H01L29/66575

Abstract: In a method of manufacturing a semiconductor device, a semiconductor substrate is prepared. Boron-containing ions are generated by reacting a borane-based compound and a halogen-containing source with each other. The borane-based compound includes boron having a mass number of 11 (11B). The boron-containing ions are implanted into the semiconductor substrate to form an impurity region.

Abstract translation: 在制造半导体器件的方法中，制备半导体衬底。 含硼的离子通过使硼烷类化合物和含卤素源彼此反应而产生。 基于硼烷的化合物包括质量数为11（11B）的硼。 将含硼离子注入到半导体衬底中以形成杂质区。