公开(公告)号：US12119066B2

公开(公告)日：2024-10-15

申请号：US17982081

申请日：2022-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyebin Kim ,  Yohan Lee ,  Ho-Jun Lee

IPC: G11C16/10 ,  G11C16/08 ,  G11C16/12

CPC classification number: G11C16/102 ,  G11C16/08 ,  G11C16/12

Abstract: A flash memory device is provided. The flash memory device includes: a first memory cell; a second memory cell on the first memory cell; and a third memory cell between the first memory cell and the second memory cell. The first memory cell, the second memory cell and the third memory cell share a channel. The third memory cell is configured to block channel sharing between the first memory cell and the second memory cell based on a channel separation voltage provided in first to k-th program loops. The third memory cell is configured to connect the channel sharing between the first memory cell and the second memory cell based on a channel connection voltage provided to the third memory cell in a (k+1)-th program loop.