公开(公告)号：US10079186B2

公开(公告)日：2018-09-18

申请号：US15273933

申请日：2016-09-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangyub Ie ,  Minwoo Song ,  Jonghan Lee ,  Hyungsuk Jung ,  Hyeri Hong

IPC: H01L23/58 ,  H01L21/66 ,  H01L27/088 ,  H01L29/49 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/08

CPC classification number: H01L22/34 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823462 ,  H01L22/14 ,  H01L27/0886 ,  H01L29/0847 ,  H01L29/42364 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/7848

Abstract: A method of fabricating a semiconductor device includes forming first and second fin patterns in an active region and in a measurement region of a substrate, respectively, the measurement region being different from the active region, forming first and second gate electrodes to cross the first and second fin patterns, respectively, and measuring a contact potential difference (Vcpd) of the second gate electrode to determine a threshold voltage of the first gate electrode based on the measured contact potential difference (Vcpd).