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公开(公告)号：US20230363142A1
公开(公告)日：2023-11-09
申请号：US18130769
申请日：2023-04-04
发明人： Intak Jeon , Hanjin Lim , Hyungsuk Jung
IPC分类号： H10B12/00
CPC分类号： H10B12/31 , H10B12/033
摘要： A semiconductor memory device includes an interlayer insulating layer, a plurality of first contact pads embedded in the interlayer insulating layer, a plurality of first work function adjustment patterns embedded in the interlayer insulating layer and disposed on the plurality of first contact pads, and a plurality of lower electrodes disposed on the plurality of first work function adjustment patterns.
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公开(公告)号：US12057470B2
公开(公告)日：2024-08-06
申请号：US17809727
申请日：2022-06-29
发明人： Jungmin Park , Hanjin Lim , Hyungsuk Jung
CPC分类号： H01L28/55 , H01L28/65 , H01L28/75 , H10B12/482 , H01L28/82
摘要： A semiconductor device includes a capacitor. The capacitor includes a bottom electrode, a dielectric layer, and a top electrode that are sequentially stacked in a first direction. The dielectric layer includes a first dielectric layer and a second dielectric layer that are interposed between the bottom electrode and the top electrode and are stacked in the first direction. The first dielectric layer is anti-ferroelectric, and the second dielectric layer is ferroelectric. A thermal expansion coefficient of the first dielectric layer is greater than a thermal expansion coefficient of the second dielectric layer.
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公开(公告)号：US20240105765A1
公开(公告)日：2024-03-28
申请号：US18461408
申请日：2023-09-05
发明人： Jungmin Park , Intak Jeon , Hanjin Lim , Hyungsuk Jung
CPC分类号： H01L28/92 , H10B12/0335 , H10B12/315
摘要： A capacitor structure includes a first lower conductive pattern, a first capacitor, a first upper conductive pattern, a second lower conductive pattern, a second capacitor and a second upper conductive pattern. The first capacitor includes first lower electrodes, first upper electrodes and first dielectric structures. Each of the first dielectric structures are disposed between one of the first lower electrodes and a corresponding one of the first upper electrodes. The first upper conductive pattern is formed on and is electrically connected to the first upper electrodes. The second lower conductive pattern is spaced apart from the first lower conductive pattern disposed on the substrate. The second capacitor includes second lower electrodes, second upper electrodes and second dielectric structures. The second upper conductive pattern is formed on and is electrically connected to the second upper electrodes. The first and second conductive patterns are electrically insulated from each other.
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公开(公告)号：US20240030024A1
公开(公告)日：2024-01-25
申请号：US18137339
申请日：2023-04-20
发明人： Intak Jeon , Hanjin Lim , Hyungsuk Jung
IPC分类号： H01L21/02 , H01L21/3105
CPC分类号： H01L21/0228 , H01L21/02181 , H01L21/02189 , H01L21/02205 , H01L21/31055
摘要： In a method of a method of depositing a layer, a substrate is loaded on a substrate stage within a chamber. A precursor gas and a reaction gas are alternately supplied into the chamber to form at least one atomic layer. A surface of the at least one atomic layer is planarized by applying pressure on the surface of the at least one atomic layer to diffuse atoms located on the surface having a relatively high curvature. The precursor gas and the reaction gas are alternately supplied into the chamber to form at least one atomic layer on the planarized atomic layer.
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公开(公告)号：US20230290811A1
公开(公告)日：2023-09-14
申请号：US18052562
申请日：2022-11-03
发明人： Jungmin Park , Hanjin Lim , Hyungsuk Jung
IPC分类号： H01L29/00
摘要： A semiconductor device includes a capacitor structure. The capacitor structure includes a bottom electrode, a dielectric layer, and a top electrode that are stacked in a first direction. The dielectric layer includes a first dielectric layer, a second dielectric layer stacked on the first dielectric layer in the first direction, and a first impurity provided in the first dielectric layer. The first dielectric layer includes a ferroelectric material, and the second dielectric layer includes an anti-ferroelectric material.
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公开(公告)号：US20240321943A1
公开(公告)日：2024-09-26
申请号：US18601032
申请日：2024-03-11
发明人： Jungmin Park , Hanjin Lim , Hyungsuk Jung
IPC分类号： H10B12/00
CPC分类号： H01L28/75 , H01L28/65 , H10B12/31 , H10B12/482 , H10B12/488
摘要： A semiconductor memory device includes an upper electrode, a lower electrode, an anti-ferroelectric layer disposed between the upper electrode and the lower electrode and including an anti-ferroelectric, an oxide layer disposed on a first surface of the anti-ferroelectric layer and including a high dielectric material, and a metal oxide layer disposed on a second surface of the anti-ferroelectric layer opposite to the first surface. A thickness of each of the oxide layer and the metal oxide layer is less than a thickness of the anti-ferroelectric layer.
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公开(公告)号：US20240292596A1
公开(公告)日：2024-08-29
申请号：US18489189
申请日：2023-10-18
发明人： Intak Jeon , Jungmin Park , Hanjin Lim , Hyungsuk Jung
IPC分类号： H10B12/00
CPC分类号： H10B12/315 , H10B12/033
摘要： A semiconductor device includes a lower structure, a capacitor on the lower structure, the capacitor including a first bottom electrode, which is extended in a direction perpendicular to a bottom surface of the lower structure, and a second bottom electrode, which is provided on the first bottom electrode, a bottom supporting pattern supporting the first bottom electrode, and a top supporting pattern provided on the bottom supporting pattern to support the first bottom electrode. The first bottom electrode includes a first material, and the second bottom electrode may include a second material. A work function of the second material is greater than a work function of the first material.
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公开(公告)号：US20240209495A1
公开(公告)日：2024-06-27
申请号：US18425048
申请日：2024-01-29
发明人： Suhwan Kim , Hyunjun Kim , Younglim Park , Dongkwan Baek , Hyungsuk Jung
IPC分类号： C23C16/02 , C23C16/44 , C23C16/448 , C23C16/52
CPC分类号： C23C16/0245 , C23C16/4412 , C23C16/4482 , C23C16/52
摘要： A deposition system, includes: a reaction chamber; a first gas supply unit supplying a first precursor in a liquid state stored in a first main tank to the reaction chamber in a gaseous state; a reactant supply unit supplying a reactant to the reaction chamber; and an exhaust unit discharging an exhaust material, wherein the first gas supply unit includes a first sub tank, a first liquid mass flow controller, and a first vaporizer, the first precursor is supplied to the reaction chamber by passing through the first sub tank, the first liquid mass flow controller, and the first vaporizer, a first automatic refill system operates to periodically fill the first sub tank with the liquid first precursor stored in the first main tank, and the exhaust unit comprises a processing chamber, a pump, and a scrubber to which a plasma pretreatment system is applied.
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9.发明公开公开(公告)号：US20240021427A1
公开(公告)日：2024-01-18
申请号：US18201251
申请日：2023-05-24
发明人： Jungmin Park , Hanjin Lim , Jaesoon Lim , Hyungsuk Jung
IPC分类号： H01L21/02 , H01L21/324 , C23C16/04 , C23C16/56
CPC分类号： H01L21/02205 , H01L21/0228 , H01L21/324 , H01L21/022 , C23C16/04 , C23C16/56 , H01L21/02112
摘要： A method of forming a thin film is provided, the method including: an operation of supplying a precursor to a substrate, to selectively adsorb the precursor to a partial region of a surface of the substrate; an operation of performing a region-selective annealing by irradiating microwaves onto the substrate; and an operation of supplying a reactant to react with the precursor adsorbed on the substrate to form a thin film unit layer, wherein the microwave irradiated onto the substrate induces vibrations in at least a portion of the precursor so that the partial region of the surface of the substrate on which the precursor is adsorbed is locally heated.
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公开(公告)号：US20240008254A1
公开(公告)日：2024-01-04
申请号：US18116071
申请日：2023-03-01
发明人： Jungmin Park , Hanjin Lim , Hyungsuk Jung
IPC分类号： H10B12/00
CPC分类号： H10B12/315 , H10B12/033
摘要： A semiconductor device includes a substrate, a lower electrode above the substrate, the lower electrode extending in a vertical direction, a support surrounding a side wall of the lower electrode and supporting the lower electrode, a dielectric layer on the lower electrode and the support, and an upper electrode on the dielectric layer, wherein the lower electrode includes a base electrode layer and an insertion layer, the base electrode layer containing a halogen element, and the insertion layer containing carbon, and the insertion layer is inserted in a portion of the lower electrode, the portion of the lower electrode being adjacent to the support and the dielectric layer.
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