公开(公告)号：US20250167110A1

公开(公告)日：2025-05-22

申请号：US18617033

申请日：2024-03-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jintae KIM ,  Hyo Jong SHIN ,  Panjae PARK ,  Kang-ill SEO

IPC: H01L23/528 ,  H01L27/06 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: Provided is a semiconductor device based on a cell block which may include: a 1st cell comprising a 1st lower active region and a 1st upper active region above the 1st lower active region in a 3rd direction, both being extended in a 1st direction; a 2nd cell comprising a 2nd lower active region and a 2nd upper active region above the 2nd lower active region in the 3rd direction, both being extended in the 1st direction; and a cell spacer between the 1st cell and the 2nd cell in a 2nd direction, wherein no active region is formed in the cell spacer.