公开(公告)号：US20140199820A1

公开(公告)日：2014-07-17

申请号：US14143255

申请日：2013-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Man PARK ,  Hyo-Jin YUN ,  Jin-Seo LEE ,  Youn-Joung CHO ,  Jun-Hyun CHO ,  Jung-Sik CHOI

IPC: H01L21/308 ,  H01L45/00

CPC classification number: H01L21/3088 ,  H01L21/0274 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/144 ,  H01L45/1683

Abstract: A method of forming a pattern includes forming an underlayer on an etching target layer by a chemical vapor deposition (CVD) process, the underlayer including a silicon compound combined with a photoacid generator (PAG), forming a photoresist layer on the underlayer, irradiating extreme ultraviolet (EUV) light on the photoresist layer to form a photoresist pattern, and etching the etching target layer using the photoresist pattern as an etching mask.

Abstract translation: 形成图案的方法包括通过化学气相沉积（CVD）工艺在蚀刻靶层上形成底层，底层包括与光致酸产生剂（PAG）组合的硅化合物，在底层上形成光致抗蚀剂层，照射极端 在光致抗蚀剂层上形成紫外线（EUV）光以形成光致抗蚀剂图案，并使用光刻胶图案蚀刻蚀刻目标层作为蚀刻掩模。