公开(公告)号：US20140199820A1

公开(公告)日：2014-07-17

申请号：US14143255

申请日：2013-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Man PARK ,  Hyo-Jin YUN ,  Jin-Seo LEE ,  Youn-Joung CHO ,  Jun-Hyun CHO ,  Jung-Sik CHOI

IPC: H01L21/308 ,  H01L45/00

CPC classification number: H01L21/3088 ,  H01L21/0274 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/144 ,  H01L45/1683

Abstract: A method of forming a pattern includes forming an underlayer on an etching target layer by a chemical vapor deposition (CVD) process, the underlayer including a silicon compound combined with a photoacid generator (PAG), forming a photoresist layer on the underlayer, irradiating extreme ultraviolet (EUV) light on the photoresist layer to form a photoresist pattern, and etching the etching target layer using the photoresist pattern as an etching mask.

Abstract translation: 形成图案的方法包括通过化学气相沉积（CVD）工艺在蚀刻靶层上形成底层，底层包括与光致酸产生剂（PAG）组合的硅化合物，在底层上形成光致抗蚀剂层，照射极端 在光致抗蚀剂层上形成紫外线（EUV）光以形成光致抗蚀剂图案，并使用光刻胶图案蚀刻蚀刻目标层作为蚀刻掩模。

公开(公告)号：US20140316164A1

公开(公告)日：2014-10-23

申请号：US14319554

申请日：2014-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youn-Joung CHO ,  Senji WADA ,  Jung-Sik CHOI ,  Jin-Seo LEE ,  Atsushi SAKURAI ,  Kyoo-Chul CHO ,  Atsuya YOSHINAKA ,  Haruyoshi SATO ,  Junji UEYAMA ,  Tomoharu YOSHINO ,  Masako SHIMIZU

IPC: C07F3/00

CPC classification number: C07F3/003 ,  C07C249/02 ,  C07C251/08 ,  C23C16/18

Abstract: The β-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the β-ketoimine ligand. A method of forming the β-ketoimine ligand and a method of forming a thin film using the metal complex compound including β-ketoimine ligand are provided.

公开(公告)号：US20140309456A1

公开(公告)日：2014-10-16

申请号：US14317102

申请日：2014-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youn-Joung CHO ,  Senji WADA ,  Jung-Sik CHOI ,  Jin-Seo LEE ,  Atsushi SAKURAI ,  Kyoo-Chul CHO ,  Atsuya YOSHINAKA ,  Haruyoshi SATO ,  Junji UEYAMA ,  Tomoharu YOSHINO ,  Masako SHIMIZU

IPC: C07C251/08

CPC classification number: C07F3/003 ,  C07C249/02 ,  C07C251/08 ,  C23C16/18

Abstract: The β-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the β-ketoimine ligand. A method of forming the β-ketoimine ligand and a method of forming a thin film using the metal complex compound including β-ketoimine ligand are provided.

Abstract translation: 酮亚胺配体由下式1表示：其中R 1和R 2各自独立地为C 1 -C 5烷基。 金属络合物包括β-酮亚胺配体。 提供了形成β-酮亚胺配体的方法以及使用包括β-酮亚胺配体的金属络合物形成薄膜的方法。