公开(公告)号：US11972791B2

公开(公告)日：2024-04-30

申请号：US17689480

申请日：2022-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyojung Jang ,  Jinyoung Kim ,  Sehwan Park ,  Jisang Lee

IPC: G11C11/4096 ,  G11C7/10 ,  G11C11/4074 ,  G11C11/408 ,  G11C11/4099

CPC classification number: G11C11/4096 ,  G11C7/1039 ,  G11C11/4074 ,  G11C11/4085 ,  G11C11/4099

Abstract: In a method of reading data in a nonvolatile memory device including a plurality of memory cells having a plurality of states including a first state and a second state, a first read operation for the first state is performed, and a second read operation for the second state is performed. To perform the first read operation, cell counts for a valley of the first state are obtained by performing a valley cell count operation for the first state, a first read voltage level for the first state is determined based on the cell counts and at least one first reference parameter for the first state, and a first sensing operation for the first state is performed by using the first read voltage level. To perform the second read operation, a second read voltage level for the second state is determined based on the cell counts and at least one second reference parameter for the second state, and a second sensing operation for the second state is performed by using the second read voltage level.

公开(公告)号：US20250054563A1

公开(公告)日：2025-02-13

申请号：US18655941

申请日：2024-05-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sehwan Park ,  Jinyoung Kim ,  Jisang Lee ,  Hyojung Jang

IPC: G11C29/52 ,  G11C7/10 ,  G11C7/22

Abstract: A memory device includes a memory cell array, a control logic which controls a read operation to read hard decision data and soft decision data from each page, and a page buffer which includes a first latch related to sensing of the hard decision data and a second latch related to sensing of the soft decision data. The control logic controls performing a first sensing operation of storing a value determined based on a first offset level, in the second latch, at a first sensing timing, and a second sensing operation of storing a value determined based on a second offset level, in the second latch, at a second sensing timing, and performs a control operation to provide a set signal SET to the second latch in the first sensing operation, and provide a reset signal RST to the second latch in the second sensing operation.