公开(公告)号：US09989860B2

公开(公告)日：2018-06-05

申请号：US15255925

申请日：2016-09-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Hee Lee ,  Hyun-Seok Uhm ,  Il-Yong Jang

IPC: G03B27/68 ,  G03F7/20 ,  G03F1/22 ,  G03F1/20

CPC classification number: G03F7/70283 ,  G03F1/20 ,  G03F1/22 ,  G03F1/68 ,  G03F1/76 ,  G03F1/78

Abstract: A pattern generating method includes, generating a first bit map from inputted pattern data. Characteristics of a plurality of beams for exposing a pattern on a substrate are analyzed, each of the plurality of beams being designated to correspond to one of a plurality of grids in the first bit map. The pattern data is corrected such that at least one of the plurality of beams is designated to expose at least a portion of the pattern on the substrate. A second bit map is generated from the corrected pattern data. The substrate is patterned using the plurality of beams according to the designation of the second bit map.