Abstract:
An exposing method includes irradiating a first light having a first energy to a first exposed region of a photoresist film through a first shot region of a mask, and irradiating a second light having a second energy to the first exposed region of the photoresist film through a second shot region of the mask.
Abstract:
A reflective extreme ultraviolet (EUV) mask includes a mask substrate, a reflecting layer on an upper surface of the mask substrate, and an absorbing layer pattern on an upper surface of the reflecting layer, the absorbing layer pattern having an exposing region and a peripheral region, and the absorbing layer pattern including a grating pattern in the peripheral region to reduce reflectivity of light incident on the peripheral region.