公开(公告)号：US20220102491A1

公开(公告)日：2022-03-31

申请号：US17038217

申请日：2020-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwi-Chan JUN ,  Heon-jong SHIN ,  In-chan HWANG ,  Jae-ran JANG

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/417 ,  H01L27/088 ,  H01L29/40 ,  H01L21/8234

Abstract: An integrated circuit device is provided as follows. A fin-type active region extends on a substrate in a first horizontal direction. A gate line extends on the fin-type active region in a second horizontal direction intersecting the first horizontal direction. A source/drain region is disposed in the fin-type active region at one side of the gale line. An insulating cover extends parallel to the substrate, with the gate line and the source/drain region arranged between the insulating cover and the substrate. A source/drain contact that vertically extends through the insulating cover has a first sidewall covered with the insulating cover and an end connected to the source/drain region. A fin isolation insulating unit vertically extends through the insulating cover into the fin-type active region. The source/drain region is arranged between the fin isolation insulating unit and the gate line.

公开(公告)号：US20200235096A1

公开(公告)日：2020-07-23

申请号：US16840322

申请日：2020-04-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwi-chan JUN ,  Heon-jong SHIN ,  In-chan HWANG ,  Jae-ran JANG

IPC: H01L27/088 ,  H01L29/78 ,  H01L23/528 ,  H01L21/761 ,  H01L21/762 ,  H01L27/02 ,  H01L21/265 ,  H01L21/768 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/417 ,  H01L29/08

Abstract: An integrated circuit device is provided as follows. A fin-type active region extends on a substrate in a first horizontal direction. A gate line extends on the fin-type active region in a second horizontal direction intersecting the first horizontal direction. A source/drain region is disposed in the fin-type active region at one side of the gate line. An insulating cover extends parallel to the substrate, with the gate line and the source/drain region arranged between the insulating cover and the substrate. A source/drain contact that vertically extends through the insulating cover has a first sidewall covered with the insulating cover and an end connected to the source/drain region. A fin isolation insulating unit vertically extends through the insulating cover into the fin-type active region. The source/drain region is arranged between the fin isolation insulating unit and the gate line.

公开(公告)号：US20180261596A1

公开(公告)日：2018-09-13

申请号：US15808865

申请日：2017-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwi-chan JUN ,  Heon-jong SHIN ,  In-chan HWANG ,  Jae-ran JANG

IPC: H01L27/088 ,  H01L23/528 ,  H01L29/08 ,  H01L29/417 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/768 ,  H01L21/265 ,  H01L27/02 ,  H01L21/762 ,  H01L21/761

Abstract: An integrated circuit device is provided as follows. A fin-type active region extends on a substrate in a first horizontal direction. A gate line extends on the fin-type active region in a second horizontal direction intersecting the first horizontal direction. A source/drain region is disposed in the fin-type active region at one side of the gate line. An insulating cover extends parallel to the substrate, with the gate line and the source/drain region arranged between the insulating cover and the substrate. A source/drain contact that vertically extends through the insulating cover has a first sidewall covered with the insulating cover and an end connected to the source/drain region. A fin isolation insulating unit vertically extends through the insulating cover into the fin-type active region. The source/drain region is arranged between the fin isolation insulating unit and the gate line.