公开(公告)号：US20180261596A1

公开(公告)日：2018-09-13

申请号：US15808865

申请日：2017-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwi-chan JUN ,  Heon-jong SHIN ,  In-chan HWANG ,  Jae-ran JANG

IPC: H01L27/088 ,  H01L23/528 ,  H01L29/08 ,  H01L29/417 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/768 ,  H01L21/265 ,  H01L27/02 ,  H01L21/762 ,  H01L21/761

Abstract: An integrated circuit device is provided as follows. A fin-type active region extends on a substrate in a first horizontal direction. A gate line extends on the fin-type active region in a second horizontal direction intersecting the first horizontal direction. A source/drain region is disposed in the fin-type active region at one side of the gate line. An insulating cover extends parallel to the substrate, with the gate line and the source/drain region arranged between the insulating cover and the substrate. A source/drain contact that vertically extends through the insulating cover has a first sidewall covered with the insulating cover and an end connected to the source/drain region. A fin isolation insulating unit vertically extends through the insulating cover into the fin-type active region. The source/drain region is arranged between the fin isolation insulating unit and the gate line.

公开(公告)号：US20200235096A1

公开(公告)日：2020-07-23

申请号：US16840322

申请日：2020-04-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwi-chan JUN ,  Heon-jong SHIN ,  In-chan HWANG ,  Jae-ran JANG

IPC: H01L27/088 ,  H01L29/78 ,  H01L23/528 ,  H01L21/761 ,  H01L21/762 ,  H01L27/02 ,  H01L21/265 ,  H01L21/768 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/417 ,  H01L29/08

Abstract: An integrated circuit device is provided as follows. A fin-type active region extends on a substrate in a first horizontal direction. A gate line extends on the fin-type active region in a second horizontal direction intersecting the first horizontal direction. A source/drain region is disposed in the fin-type active region at one side of the gate line. An insulating cover extends parallel to the substrate, with the gate line and the source/drain region arranged between the insulating cover and the substrate. A source/drain contact that vertically extends through the insulating cover has a first sidewall covered with the insulating cover and an end connected to the source/drain region. A fin isolation insulating unit vertically extends through the insulating cover into the fin-type active region. The source/drain region is arranged between the fin isolation insulating unit and the gate line.

公开(公告)号：US20200027875A1

公开(公告)日：2020-01-23

申请号：US16257464

申请日：2019-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seul-ki HONG ,  Hwi-chan JUN ,  Hyun-soo KIM ,  Dae-chul AHN ,  Myung YANG

IPC: H01L27/07 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/768 ,  H01L23/31 ,  H01L49/02 ,  H01L29/06 ,  H01L29/78

Abstract: A semiconductor device includes a substrate including a first region and a second region, an active gate structure on the substrate in the first region, a dummy gate structure on the substrate in the second region, a source/drain on the substrate in the first region at each of opposite sides of the active gate structure, a plurality of first conductive contacts respectively connected to the active gate structure and the source/drain, a resistive structure on the dummy gate structure in the second region, a plurality of second conductive contacts respectively connected to the plurality of first conductive contacts and the resistive structure, and an etch stop layer between the dummy gate structure and the resistive structure. The etch stop layer includes a lower etch stop layer and an upper etch stop layer, which are formed of different materials.