公开(公告)号：US20240379162A1

公开(公告)日：2024-11-14

申请号：US18653627

申请日：2024-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seokhyeon CHAE ,  Hyunkook PARK ,  Inmo KIM ,  Hanmin NAM

IPC: G11C16/08 ,  G11C5/06 ,  G11C16/04

Abstract: According to some embodiments of the inventive concept, there is provided a non-volatile memory device comprising: a memory cell array; a pass transistor circuit electrically connected to the memory cell array; a block select line group including a plurality of block select lines, wherein the plurality of block select lines comprises a first block select line and a second block select line, each of which extends in a first direction on a first layer, and the block select line group is electrically connected to the pass transistor circuit; and a first metal line extending in a second direction on a second layer, wherein the second layer is on the first layer, wherein at least one block select line includes at least one twist pattern that changes a path of the at least one block select line in a hole of the first metal line.