公开(公告)号：US20240170067A1

公开(公告)日：2024-05-23

申请号：US18388956

申请日：2023-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hanmin NAM ,  Jeunghwan PARK ,  Changyeon YU

IPC: G11C16/08 ,  G11C16/04 ,  G11C16/24

CPC classification number: G11C16/08 ,  G11C16/0433 ,  G11C16/24

Abstract: A semiconductor device includes word lines disposed on a substrate and spaced apart in a first direction perpendicular to an upper surface of the substrate, a string select line disposed on the word lines, memory strings extending in the first direction on the substrate, each memory string including a first channel extending in the first direction through the word lines, and memory cells constituted by the word lines around the first channel, bit lines electrically connected to the memory strings, and a strapping line connected to the string select.

公开(公告)号：US20240379162A1

公开(公告)日：2024-11-14

申请号：US18653627

申请日：2024-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seokhyeon CHAE ,  Hyunkook PARK ,  Inmo KIM ,  Hanmin NAM

IPC: G11C16/08 ,  G11C5/06 ,  G11C16/04

Abstract: According to some embodiments of the inventive concept, there is provided a non-volatile memory device comprising: a memory cell array; a pass transistor circuit electrically connected to the memory cell array; a block select line group including a plurality of block select lines, wherein the plurality of block select lines comprises a first block select line and a second block select line, each of which extends in a first direction on a first layer, and the block select line group is electrically connected to the pass transistor circuit; and a first metal line extending in a second direction on a second layer, wherein the second layer is on the first layer, wherein at least one block select line includes at least one twist pattern that changes a path of the at least one block select line in a hole of the first metal line.